Infineon IPD50R1K4CEAUMA1: A 500V CoolMOS™ CE Power Transistor for High-Efficiency Applications

In the rapidly evolving world of power electronics, achieving higher efficiency and power density is a constant pursuit. The Infineon IPD50R1K4CEAUMA1 stands out as a pivotal solution, engineered to meet these demanding requirements. This 500V CoolMOS™ CE power transistor is designed to deliver exceptional performance in a wide array of high-efficiency applications, from switched-mode power supplies (SMPS) and server PSUs to industrial motor drives and renewable energy systems.

At the core of this device is Infineon's advanced CoolMOS™ CE (Common Efficiency) technology. This generation of superjunction MOSFETs is optimized to provide an optimal balance between low switching losses and high ruggedness. A key feature is its extremely low effective output capacitance (Coss,eff), which is crucial for minimizing switching losses, especially in hard-switching topologies like flyback and power factor correction (PFC) circuits. This directly translates to higher system efficiency, allowing designers to push the limits of power density.

The transistor boasts a low on-state resistance (RDS(on)) of 1.4 kΩ, which ensures minimal conduction losses during operation. This characteristic is vital for improving the thermal performance of the end application, reducing the need for large heat sinks, and enabling more compact and cost-effective designs. The 500V voltage rating provides a robust safety margin for operation in universal mains applications (85 VAC – 305 VAC), enhancing system reliability.

Furthermore, the IPD50R1K4CEAUMA1 is characterized by its fast switching capability and excellent reverse recovery performance. This makes it an ideal choice for high-frequency operations, allowing for the use of smaller passive components like inductors and capacitors. The device also offers high dv/dt capability and is designed for high avalanche ruggedness, ensuring stable and dependable operation under stressful conditions.

Housed in a TO-252 (DPAK) package, this CoolMOS™ transistor is suitable for space-constrained applications while maintaining excellent thermal properties. Its eco-friendly design complies with RoHS directives, aligning with modern environmental standards.

ICGOOODFIND: The Infineon IPD50R1K4CEAUMA1 is a superior 500V power MOSFET that encapsulates the innovation of CoolMOS™ CE technology. It is an exceptional enabler for high-efficiency, high-power-density designs, offering a perfect blend of low switching and conduction losses, high ruggedness, and reliability for the next generation of power conversion systems.

Keywords: CoolMOS™ CE, High-Efficiency, Low Switching Losses, 500V MOSFET, Power Density