Infineon IPL65R130C7AUMA1: A 650V CoolMOS™ CE Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device plays a pivotal role in determining overall performance. The Infineon IPL65R130C7AUMA1 stands out as a premier solution, a 650V superjunction MOSFET from the CoolMOS™ CE series engineered specifically to meet these challenges.

This transistor is designed to excel in a wide array of high-performance applications, including switched-mode power supplies (SMPS), power factor correction (PFC) stages, lighting solutions, and industrial motor drives. Its core innovation lies in its exceptional balance between low switching losses and superior conduction behavior. With a maximum on-state resistance (R DS(on)) of just 130mΩ, the device minimizes conduction losses, leading to less heat generation and higher efficiency. This is particularly critical in continuous conduction mode (CCM) operations where currents are consistently high.

A key feature of the CoolMOS™ CE technology is its integrated fast body diode, which enhances reliability in hard-switching and inductive load applications. This robust diode characteristics reduce reverse recovery losses and improve system ruggedness, allowing for more compact and reliable designs. Furthermore, the low gate charge (Q G) of the IPL65R130C7AUMA1 ensures swift switching transitions. This not only reduces driving losses but also enables operation at higher switching frequencies. The ability to switch faster is a fundamental enabler for increased power density, as it allows designers to use smaller passive components like inductors and capacitors.

The 650V voltage rating provides a comfortable safety margin for operation off universal mains inputs (85V AC to 265V AC), making it a versatile choice for global products. Its high avalanche ruggedness further ensures dependable operation under stressful conditions, such as voltage spikes and overloads. Packaged in the industry-standard TO-220FP package, it offers a excellent thermal performance and is well-suited for both through-hole and clip-bonding assembly processes, catering to automated manufacturing lines.

ICGOOODFIND: The Infineon IPL65R130C7AUMA1 is a high-efficiency 650V superjunction MOSFET that sets a benchmark for performance. By masterfully combining exceptionally low on-resistance with fast switching capabilities and a robust body diode, it directly enables the development of smaller, cooler, and more efficient power supplies and motor drives, pushing the boundaries of power electronics design.

Keywords: CoolMOS™ CE, High-Efficiency, Low Switching Losses, 650V MOSFET, Power Density