Infineon IPD80R2K8CE: High-Performance Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the need for advanced semiconductor components. At the forefront of this innovation is the Infineon IPD80R2K8CE, a state-of-the-art power MOSFET engineered to excel in demanding switching applications. This device encapsulates Infineon's leadership in power semiconductor technology, offering a blend of exceptionally low on-state resistance (R DS(on)) and superior switching performance that is critical for minimizing energy losses.

A key highlight of the IPD80R2K8CE is its remarkably low R DS(on) of just 2.8 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is paramount for reducing conduction losses, which directly translates into higher system efficiency, less heat generation, and the potential for more compact thermal management solutions. This makes it an ideal candidate for high-current applications where every milliohm counts.

Furthermore, the MOSFET is built on Infineon's advanced OptiMOS 5 technology platform. This technology is renowned for its optimal balance between switching speed and losses. The device features low gate charge (Q G) and outstanding reverse recovery characteristics, enabling faster switching frequencies. This allows designers to shrink the size of passive components like inductors and capacitors, thereby increasing the overall power density of the end product.

The robustness of the IPD80R2K8CE is another significant advantage. It offers a high maximum drain current (I D) and is housed in a TOLL (TO-leadless) package. This surface-mount package provides an excellent thermal connection to the PCB, ensuring efficient heat dissipation and improving reliability in space-constrained environments like server power supplies, telecom infrastructure, and high-performance DC-DC converters.

ICGOOODFIND: The Infineon IPD80R2K8CE stands out as a top-tier power MOSFET that directly addresses the core challenges of modern power design: achieving unprecedented levels of efficiency, power density, and thermal performance. Its combination of ultra-low R DS(on), fast switching capability, and robust packaging makes it an exceptional choice for engineers designing the next generation of efficient power systems.

Keywords: Power MOSFET, Low RDS(on), OptiMOS 5, Switching Efficiency, TOLL Package.