Infineon IPA60R120C7 CoolMOS Power Transistor: Datasheet, Application Notes, and Design Considerations
The Infineon IPA60R120C7 is a state-of-the-art CoolMOS™ Power Transistor built on a superjunction (SJ) technology platform. As part of the C7 series, it is engineered to deliver an exceptional balance of high efficiency, robust performance, and reliability in demanding power conversion applications. This article delves into its key specifications, practical application insights, and critical design considerations to maximize its potential.
Datasheet Overview: Key Specifications
The datasheet for the IPA60R120C7 reveals its core electrical characteristics, which are pivotal for selection and circuit design:
Voltage and Current Ratings: It boasts a drain-source voltage (VDS) of 650 V and a continuous drain current (ID) of 11.5 A at 100°C, making it suitable for off-line power supplies.
Ultra-Low On-Resistance: A standout feature is its remarkably low maximum on-state resistance (RDS(on)) of 120 mΩ (max. at TJ=25°C). This directly translates to reduced conduction losses, a primary source of heat generation.
Superior Switching Performance: The C7 technology ensures exceptionally low gate charge (QG) and low effective output capacitance (COSS(eff)). This combination minimizes switching losses, enabling higher switching frequencies and, consequently, smaller magnetic components.
Intrinsic Body Diode: The device features a fast intrinsic body diode, which is crucial for operation in half-bridge or full-bridge topologies.
Application Notes
The IPA60R120C7 is ideally suited for a wide array of high-efficiency switch-mode power supplies (SMPS), including:
Server & Telecom Power Supplies (PSUs): Its high efficiency helps meet stringent 80 PLUS Titanium and Platinum standards.
Industrial Power Systems: Used in power factor correction (PFC) stages (e.g., boost PFC) and DC-DC converters (e.g., phase-shifted full-bridge, LLC resonant converters).
Solar Inverters and EV Charging Infrastructure: Its high voltage rating and efficiency are critical in renewable energy and automotive applications.
Lighting: High-performance LED driving solutions.
Critical Design Considerations
Successfully implementing this MOSFET requires careful attention to several factors:
1. Gate Driving: To leverage its fast switching capability, a low-impedance, high-current gate driver is essential. The recommended gate-source voltage (VGS) is typically +15V/-10V or +15V/0V. Proper PCB layout to minimize parasitic inductance in the gate and power loops is non-negotiable to prevent ringing and potential spurious turn-on.
2. Thermal Management: Despite its low RDS(on), managing power dissipation is critical. A properly sized heatsink is required to maintain the junction temperature (TJ) well below the maximum rating of 150°C. Thermal calculations must account for both conduction and switching losses.
3. Avalanche Ruggedness: While robust, the device should be operated within its Safe Operating Area (SOA). The design should avoid conditions that could force it into avalanche breakdown, or it must be confirmed that any single-pulse avalanche events are within the specified energy limits.
4. Body Diode Usage: In bridge topologies, the body diode's reverse recovery charge (Qrr) impacts switching losses and EMI. For optimal performance, especially at high frequencies, implementing zero-voltage switching (ZVS) techniques is highly advantageous to avoid hard commutation of the body diode.
ICGOODFIND Summary
The Infineon IPA60R120C7 CoolMOS™ C7 represents a peak in high-voltage MOSFET technology, offering designers a path to achieve unprecedented power density and efficiency. Its defining characteristics—ultra-low RDS(on) and superior dynamic performance—make it a top-tier choice for advanced power supplies. Successful deployment hinges on meticulous attention to gate drive design, thermal management, and layout optimization to fully harness its capabilities.
Keywords: CoolMOS, Superjunction MOSFET, High-Efficiency, Switching Losses, Thermal Management.
