Infineon IPP048N12N3G: A High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electrical systems places immense demands on power switching components. At the forefront of this innovation is Infineon's IPP048N12N3G, a benchmark N-channel power MOSFET that exemplifies the advanced performance of the OptiMOS™ 5 120 V technology platform. This device is engineered to deliver exceptional efficiency, robustness, and reliability in a wide array of demanding applications.

A key strength of the IPP048N12N3G lies in its exceptionally low figure-of-merit (FOM), characterized by an ultra-low on-state resistance (R DS(on)) of just 1.6 mΩ maximum at 10 V and outstanding gate charge (Q G). This optimal combination is the cornerstone of its high efficiency. By minimizing both conduction and switching losses, this MOSFET enables power converters to operate at higher frequencies without sacrificing thermal performance. This is crucial for designing smaller, lighter, and more energy-efficient systems, from server power supplies to industrial motor drives.

The device is housed in an TOLL (TO-Leadless) package, which offers a superior performance-to-footprint ratio. This package features a very low parasitic inductance and excellent thermal dissipation capabilities, allowing designers to push the limits of power density. The exposed top side also facilitates direct cooling, making it an ideal choice for space-constrained applications where thermal management is a primary concern.

Beyond raw performance, the IPP048N12N3G is designed for robustness. It offers a high peak current capability and is qualified for automotive-grade applications (AEC-Q101), underscoring its reliability under harsh operating conditions. This makes it suitable not only for industrial and telecom infrastructure but also for automotive systems like DC-DC converters and battery management.

ICGOOODFIND: The Infineon IPP048N12N3G stands out as a premier solution for engineers aiming to maximize efficiency and power density. Its best-in-class R DS(on), optimized switching characteristics, and advanced TOLL package make it an indispensable component for next-generation power conversion designs in computing, automotive, and industrial sectors.

Keywords:

OptiMOS™ 5

Low R DS(on)

High Efficiency

TOLL Package

Power Density