Infineon IRF3805STRL-7PP Power MOSFET: Datasheet, Pinout, and Application Circuits
The Infineon IRF3805STRL-7PP is a high-performance N-channel power MOSFET engineered to deliver exceptional efficiency and reliability in demanding power conversion applications. As part of Infineon's robust semiconductor portfolio, this device is optimized for low on-state resistance and high switching speed, making it a preferred choice for designers of switch-mode power supplies (SMPS), motor control systems, and DC-DC converters.
Key Datasheet Specifications and Features
A thorough review of the datasheet reveals the critical parameters that define this component's capabilities. The IRF3805STRL-7PP is built on advanced HEXFET® technology, which is central to its performance.
Drain-Source Voltage (VDS): 55 V
Continuous Drain Current (ID): 180 A at 25°C
On-Resistance (RDS(on)): A remarkably low 1.8 mΩ (max) at VGS = 10 V. This is a pivotal feature, as it directly translates to reduced conduction losses and higher overall system efficiency.
Gate Threshold Voltage (VGS(th)): 2 - 4 V
Avalanche Energy Rated: This specification ensures robustness and durability in harsh operating environments where inductive spikes may occur.
Package: The device is housed in a TO-263 (D2PAK) surface-mount package, which offers an excellent balance between power handling capability and board space savings. This package is renowned for its good thermal performance, facilitating effective heat dissipation away from the silicon die.
Pinout Configuration
The pinout for the TO-263 package is standard and straightforward:
1. Gate (G): This is the control pin. The voltage applied between the Gate and Source pins activates the MOSFET.
2. Drain (D): This pin is connected to the load and is the primary terminal for the high-current path. The tab of the package is also electrically connected to the Drain pin, which is crucial for both electrical connectivity and thermal management.
3. Source (S): This pin completes the circuit path and is typically connected to ground.
Application Circuits
The combination of high current handling and low RDS(on) makes the IRF3805STRL-7PP exceptionally versatile.
1. Synchronous Buck DC-DC Converter: In modern voltage regulator modules (VRMs) and point-of-load (POL) converters, this MOSFET is ideally suited to serve as the low-side synchronous rectifier. Its ultra-low on-resistance minimizes power loss during the freewheeling phase of the switching cycle, which is critical for achieving high efficiency, especially in high-current applications like server power supplies and GPU voltage regulation.
2. Motor Drive and Control Circuit: For brushed DC or stepper motor control, the IRF3805STRL-7PP can be used in an H-bridge configuration. Its high continuous current rating allows it to drive substantial motor loads directly, while its fast switching characteristics enable precise pulse-width modulation (PWM) speed control. A simple H-bridge driver circuit using this MOSFET can efficiently control the direction and speed of a motor.
3. Solid-State Relay (SSR) Replacement: This MOSFET can act as a high-power, high-speed switching element to replace mechanical relays and contactors. A driver circuit using an optocoupler to isolate the gate signal can create a robust SSR capable of switching DC loads up to 180A, with the benefit of silent operation and a much longer lifespan.
When designing with this MOSFET, careful attention must be paid to gate driving. To achieve the specified low RDS(on), a gate drive voltage of 10V is recommended. Using a dedicated MOSFET gate driver IC is essential to provide the necessary current to quickly charge and discharge the substantial gate capacitance, ensuring clean and fast switching transitions and minimizing switching losses.
ICGOODFIND Summary
The Infineon IRF3805STRL-7PP stands out as an extremely efficient power switching solution due to its industry-leading low on-resistance and high current capability. Its excellent performance in synchronous rectification and motor control stages makes it a top-tier component for engineers focused on maximizing power density and efficiency in their designs. Proper gate driving and thermal management are key to unlocking its full potential.
Keywords: Power MOSFET, Low On-Resistance, Synchronous Rectification, DC-DC Converter, Motor Control.
