Infineon IPD90N04S403ATMA1: A High-Performance 90A OptiMOS Power MOSFET
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its OptiMOS™ product family, exemplified by the high-performance IPD90N04S403ATMA1. This 90A power MOSFET is engineered to set a new benchmark in low-voltage applications, delivering an exceptional blend of low losses, robust switching performance, and superior thermal management.
A defining characteristic of the IPD90N04S403ATMA1 is its extremely low typical on-state resistance (R DS(on)) of just 1.8 mΩ at 10 V. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. Whether deployed in synchronous rectification stages of switch-mode power supplies (SMPS) or managing high currents in motor control systems, this device ensures that energy is conserved and thermal stress is kept to an absolute minimum.
Beyond its static performance, the device excels in dynamic operation. The OptiMOS™ 40V technology platform underpinning this MOSFET is optimized for fast and clean switching behavior. This results in reduced switching losses, which is critical for high-frequency operation in modern power converters aiming for smaller form factors. The low gate charge (Q G) further enhances this, allowing for simpler, more efficient drive circuitry and enabling faster switching speeds without compromising control.
The component’s superior body diode robustness offers enhanced reliability in demanding scenarios, such as during hard commutation in half-bridge configurations. This ruggedness ensures a higher tolerance against unexpected voltage spikes and reverse recovery events, safeguarding the system and increasing its operational lifespan. Housed in a D 2PAK (TO-263) package, the IPD90N04S403ATMA1 provides an excellent power dissipation capability, effectively transferring heat from the silicon die to the PCB or an attached heatsink. This makes it an ideal candidate for high-current applications where managing thermal performance is non-negotiable.
Target applications are vast and varied, spanning from server and telecom power supplies and industrial motor drives to battery management systems (BMS) and high-performance DC-DC converters. In all these fields, the IPD90N04S403ATMA1 acts as a key enabler for designers to push the boundaries of power density and energy efficiency.
ICGOOODFIND: The Infineon IPD90N04S403ATMA1 stands out as a premier solution for engineers demanding top-tier performance. Its combination of ultra-low R DS(on), fast switching, a rugged body diode, and excellent thermal characteristics makes it a versatile and highly reliable choice for advancing the state of the art in low-voltage power conversion.
Keywords: Low RDS(on), High Current Capability, OptiMOS Technology, Efficient Power Conversion, Robust Switching Performance.
