Infineon BSB015N04NX3G: A High-Performance 40V N-Channel OptiMOS™ Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. Addressing these critical demands, Infineon Technologies introduces the BSB015N04NX3G, a standout member of its esteemed OptiMOS™ power MOSFET family. This 40V N-channel MOSFET is engineered to set a new benchmark for performance in a compact package, making it an ideal solution for a wide array of demanding applications.

At the heart of this device's superiority is its exceptionally low on-state resistance (RDS(on)) of just 1.5 mΩ maximum. This ultra-low resistance is a key contributor to minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. Whether deployed in synchronous rectification, motor control, or high-current DC-DC converters, this characteristic ensures that more power is delivered to the load and less is wasted as heat.

Complementing its low RDS(on) is the MOSFET's outstanding switching performance. The OptiMOS™ technology platform is renowned for its low gate charge (Qg) and figure of merit (FOM), enabling faster switching frequencies. This allows designers to create smaller, more power-dense systems by reducing the size of passive components like inductors and capacitors, without sacrificing efficiency. This makes the BSB015N04NX3G particularly suited for modern switch-mode power supplies (SMPS) and battery management systems (BMS) where size and efficiency are critical.

The device is housed in an advanced, space-saving SuperSO8 package. This package not only minimizes the footprint on the PCB but also offers superior thermal characteristics. Its low thermal resistance ensures that heat is effectively dissipated away from the silicon die, enhancing long-term reliability and enabling higher power handling in confined spaces. Furthermore, the package is 100% RG and UIS tested, guaranteeing robustness and consistency across all production units.

A critical advantage for end applications is the excellent body diode robustness. This feature ensures high reliability under harsh conditions, such as during reverse recovery events, which is essential for circuits involving inductive loads or in bridge topologies.

ICGOOODFIND: The Infineon BSB015N04NX3G exemplifies power MOSFET innovation, delivering a potent combination of ultra-low RDS(on), superior switching speed, and exceptional thermal performance in a miniature package. It is a top-tier choice for designers aiming to push the boundaries of efficiency and power density in their applications.

Keywords: OptiMOS™, Low RDS(on), High Efficiency, SuperSO8, Power Switching.