Infineon IPB530N15N3G: High-Performance 15V OptiMOS 5 Power MOSFET
In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPB530N15N3G, a member of the advanced OptiMOS™ 5 15V family, stands out as a benchmark for high-performance power MOSFETs designed to meet the rigorous demands of modern applications. This device exemplifies Infineon's commitment to pushing the boundaries of power semiconductor technology, offering an exceptional blend of low losses, high power density, and robust operation.
A key highlight of the IPB530N15N3G is its extremely low typical on-state resistance (R DS(on)) of just 0.53 mΩ. This remarkably low value is achieved through an optimized trench technology and advanced packaging, which directly translates to minimized conduction losses. For designers, this means higher efficiency, especially in high-current applications, leading to less energy wasted as heat and improved overall system performance.
Thermal management is a critical challenge in power-dense designs. The IPB530N15N3G addresses this with its superior thermal characteristics, facilitated by a robust PQFN 3.3x3.3 mm package. This package offers an extremely low thermal resistance and an efficient top-side cooling capability. By enabling heat to be dissipated directly through the top of the package into a heatsink or the surrounding air, it allows for higher power handling in a smaller footprint. This makes it an ideal solution for space-constrained applications where cooling is a primary concern.
Furthermore, the device boasts an outstanding switching performance. The OptiMOS 5 technology ensures very low gate charge (Q G) and figure-of-merit (FOM), which significantly reduces switching losses. This is crucial for high-frequency operation in switch-mode power supplies (SMPS), motor drives, and DC-DC converters, allowing for smaller passive components and higher power density.
The 15V gate-source voltage rating makes it particularly suited for modern computing and telecom applications, where lower voltage rails are prevalent. It provides a safe and reliable operation with standard drive ICs, simplifying the design-in process. Additionally, the MOSFET is 100% avalanche tested, guaranteeing ruggedness and reliability under harsh operating conditions, including overvoltage transients.
Typical applications where the IPB530N15N3G excels include:
Synchronous rectification in server and telecom SMPS.
High-current DC-DC converters for computing motherboards and GPUs.
Motor control and drive circuits in industrial automation.
Battery management systems (BMS) and protection circuits.
ICGOODFIND: The Infineon IPB530N15N3G is a top-tier power MOSFET that sets a high standard for efficiency and power density. Its best-in-class R DS(on), superior thermal performance via top-side cooling, and excellent switching characteristics make it an indispensable component for engineers aiming to optimize the performance, size, and reliability of their next-generation power systems.
Keywords: OptiMOS 5, Low R DS(on), Top-Side Cooling, Power Density, Synchronous Rectification.
