Infineon IPN70R750P7SATMA1: 750V CoolMOS Power Transistor for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switch is a critical component whose performance directly impacts overall efficacy. The Infineon IPN70R750P7SATMA1, a 750V CoolMOS™ P7 superjunction MOSFET, stands out as a premier solution engineered to meet these challenges head-on, enabling a new generation of high-efficiency, compact power supplies.

This transistor is built upon Infineon's advanced CoolMOS™ P7 technology, which represents a significant leap forward in high-voltage MOSFET performance. The core innovation lies in its drastically reduced figure-of-merit (RDS(on) x Qg). This translates into two paramount advantages: exceptionally low conduction losses and minimized switching losses. Consequently, power supplies utilizing this MOSFET can achieve higher switching frequencies without the typical efficiency penalty. This allows designers to use smaller passive components like inductors and capacitors, dramatically increasing power density and reducing the overall system size and cost.

A key feature of the IPN70R750P7SATMA1 is its integrated fast body diode. This is crucial for operation in resonant topologies like LLC converters, which are the standard for high-efficiency AC-DC power supplies. The diode's robust reverse recovery characteristics ensure clean, reliable switching, further reducing losses and minimizing electromagnetic interference (EMI). This built-in feature enhances system reliability and simplifies the design process by mitigating the need for additional external components.

The 750V drain-source voltage rating provides a substantial safety margin in universal mains applications (85 VAC – 305 VAC). This high rating offers enhanced robustness against voltage spikes and transients, leading to more reliable end-products with a lower failure rate. Furthermore, the component boasts low gate charge (Qg) and excellent switching behavior, which reduces the stress on the gate driver circuitry and contributes to smoother, more efficient operation across the load range.

Typical applications where this MOSFET excels include:

Server and telecom switch-mode power supplies (SMPS)

Industrial power systems

High-power LED lighting drivers

Solar inverters and energy storage systems

Electric vehicle charging stations

ICGOODFIND: The Infineon IPN70R750P7SATMA1 CoolMOS™ P7 transistor is a benchmark component for high-voltage power conversion. Its superior blend of low losses, high switching frequency capability, and integrated diode robustness makes it an indispensable choice for engineers aiming to push the boundaries of efficiency and power density in their next-generation designs.

Keywords:

CoolMOS P7 Technology

High-Efficiency Power Conversion

Low Switching Losses

Integrated Body Diode

High Power Density