Infineon IPP126N10N3GXKSA1: A High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, achieving higher efficiency, greater power density, and improved thermal performance is paramount. The Infineon IPP126N10N3GXKSA1 stands out as a premier solution, engineered to meet these demanding challenges. As part of Infineon's esteemed OptiMOS™ 5 family, this 100V N-channel power MOSFET is designed to set new benchmarks in power conversion applications, from server and telecom SMPS to industrial motor drives and solar inverters.

The cornerstone of this device's superiority is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 1.26mΩ, it minimizes conduction losses, allowing more power to be delivered to the load with less energy wasted as heat. This is further complemented by an optimized gate charge, which ensures switching losses are drastically reduced. The result is a device that operates at higher frequencies with remarkable efficiency, enabling designers to shrink the size of magnetic components and heatsinks, thereby increasing overall power density.

Packaged in the robust TO-leadless (TOLL) package, the IPP126N10N3GXKSA1 offers superior thermal and electrical performance. The package's low parasitic inductance is critical for minimizing voltage overshoot and ringing in high-speed switching applications, leading to more stable and reliable operation. Furthermore, its top-side cooling capability allows for efficient heat dissipation directly from the chip surface to an attached heatsink, making it ideal for space-constrained designs where thermal management is a key concern.

Another significant advantage is its enhanced reliability and ruggedness. Built with Infineon's advanced silicon technology, the MOSFET offers an excellent safe operating area (SOA) and high avalanche ruggedness, ensuring robust performance even under stressful conditions like overloads or sudden transients.

ICGOOODFIND: The Infineon IPP126N10N3GXKSA1 is a top-tier power MOSFET that exemplifies the innovation of the OptiMOS 5 technology. Its industry-leading combination of ultra-low R DS(on), fast switching capability, and superior thermal performance in the TOLL package makes it an indispensable component for engineers striving to create the next generation of efficient, compact, and reliable power conversion systems.

Keywords: Power MOSFET, OptiMOS 5, Efficient Power Conversion, Low RDS(on), TOLL Package.